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June 1998
FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching.
Features
11 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, RDS(ON) = 0.013 @ VGS = 4.5 V. Fast switching speed. Low gate charge. Small footprint 38% smaller than a standard SO-8. Low profile package(1mm thick). Power handling capability similar to SO-8.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D S
S
5
4 3 2 1
44
20
A
G
6 7 8
pin 1
SuperSOT TM-8
D
D
D
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation
TA = 25oC unless otherwise noted FDR4420A 30 20
(Note 1a)
Units V V A
11 40
(Note 1a) (Note 1b) (Note 1c)
1.8 1 0.9 -55 to 150
W
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
70 20
C/W C/W
(c) 1998 Fairchild Semiconductor Corporation
FDR4420 Rev.D
Electrical Characteristics
Symbol Parameter OFF CHARACTERISTICS BVDSS
(TA = 25OC unless otherwise noted )
Conditions Min Typ Max Units
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 o C VDS = 24 V, VGS = 0 V TJ = 55C VGS = 20 V, VDS= 0 V VGS = -20 V, VDS= 0 V ID = 250 A, Referenced to 25 o C VDS = VGS, ID = 250 A VGS = 10 V, ID = 11A TJ =125C VGS = 4.5 V, ID = 9 A
30 20 1 10 100 -100
V mV /oC A A nA nA mV /oC 3 0.009 0.016 0.013 A 25 S V
BVDSS/TJ
IDSS IGSS IGSS
Gate - Body Leakage Current Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)/TJ
VGS(th) RDS(ON)
Gate Threshold Voltage Temp.Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance
-6 1 1.4 0.0075 0.0125 0.01 30
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd
On-State Drain Current Forward Transconductance
VGS = 10 V, VDS = 5 V VDS = 10 V, ID= 11 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 2560 560 280 pF pF pF
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15 V, ID = 9.3 A, VGS = 5 V VDD = 10 V, ID = 1 A, VGS = 10V, RGEN = 1 11 15 25 21 23 7 11 20 27 40 34 33 ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA shown below for single device operation on FR-4 board in still air.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.5 A
(Note 2)
1.5 0.7 1.2
A V
a. 70OC/W on a 1 in2 pad of 2oz copper.
b. 125OC/W on a 0.026 in2 of pad of 2oz copper.
c. 135OC/W on a 0.005 in2 of pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDR4420 Rev.D
Typical Electrical Characteristics
40 I D , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE
VGS =10V 6.0V
4.0V 3.5V
R DS(ON) , NORMALIZED
3
32 4.5V 24
2.5
VGS = 3.0V
3.0V
2
3.5
1.5
16
4.0 4.5 5.0 6.0
8
1
10
2.5V
0 0 0.4 0.8 1.2 1.6 2
0.5 VDS , DRAIN-SOURCE VOLTAGE (V)
0
8
16
24
32
40
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8
0.04 DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
ID = 11A
1.6 1.4 1.2 1 0.8 0.6 -50
I D = 5.5A
0.035 0.03 0.025 0.02 0.015 0.01 0.005
V GS =10V
R DS(ON) ,(OHM)
R DS(ON) NORMALIZED
T A = 125 o C 25 o C
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
2
4 6 8 VGS ,GATE-SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On Resistance Variation with Gate-To-Source Voltage.
VDS = 10V
I D , DRAIN CURRENT (A) 40
TJ = -55C 25C 125C
IS , REVERSE DRAIN CURRENT (A)
50
40 5 1 0.1 0.01 0.001 0.0001 1 1.5 V
GS
VGS =0V TJ = 125C 25C -55C
30
20
10
0 2 2.5 3 3.5 , GATE TO SOURCE VOLTAGE (V) 4
0
0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDR4420 Rev.D
Typical Electrical Characteristics (continued)
10 VGS , GATE-SOURCE VOLTAGE (V)
5000
I D = 11A
8
VDS = 5V 10V
CAPACITANCE (pF) 3000 2000
15V
C iss
6
1000
4
C oss
500
2
200 0.1
f = 1 MHz V GS = 0V
0.3 1 3
C rss
10 30
0
0
10
20
30
40
50
60
VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 20 RDS 5 1 0.3 0.1 0.03 0.01 0.1
(O LI N) MIT
50
I D , DRAIN CURRENT (A)
100 us 1m s 10m s 100 ms 1s 10 s DC
POWER (W)
40
SINGLE PULSE R JA= 135C/W TA = 25C
30
20
VGS = 10V SINGLE PULSE R JA = 135C/W TA = 25C
0.2 0.5 1 2 5
10
10
30
50
0 0.0001
0.001
0.01
0.1
1
10
100 300
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.0001
D = 0.5
0.2 0.1 0.05 0.02 0.01 Single Pulse
RJA (t) = r(t) * RJA R JA = 135C/W
P(pk)
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.01 0.1 t 1, TIME (sec) 1 10 100 300
0.001
Figure 11.Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
FDR4420 Rev.D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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